No image available
CDFG6517N
17A,650V Surface mount MOSFET N-Channel GaN
Specifications
Case Type
DFN8X8
Common Source Input Capacitance (Ciss)
125 pF
Common Source Output Capacitance (Coss)
41 pF
Common Source Reverse Transfer Capacitance (Crss)
0.4 pF
Continuous Drain Current
17 A
Diode Forward On Voltage (VSD)
2.4 V
Drain-Source Breakdown Voltage (BVDSS)
650 V
Drain-Source Voltage
650 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Coss(er))
59 pF
Effective Output Capacitance, Time Related (Coss(tr))
82 pF
Fall Time (tf)
4 ns
Gate Leakage Current, Forward (IGSSF)
70000 nA
Gate Leakage Current, Reverse (IGSSR)
70000 nA
Gate Threshold Voltage (VGS(th))
1.2 — 2.5 V(1.7 V Typical)
Gate-Drain Charge (Qgd)
1.2 nC
Gate-Source Charge (Qgs)
0.3 nC
Gate-Source Voltage (VGS)
-1.4 — 7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
32 A
Power Dissipation
113 W
Power Dissipation
1.1 W
Rise Time (tr)
5 ns
Saturation Drain Current (IDSS)
25 µA
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
3.5 nC
Turn-off Delay Time (tOFF)
4 ns
Turn-on Delay Time (tON)
3 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 17A,650V Surface mount MOSFET N-Channel GaN | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| CDFG6517N.PDF | Device Datasheet |
| Product Brief:New GaN FETs | Product Brief |
| Spice Model:CDFG6517N | Spice Model |