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CDFG6558N
29A,650V Surface mount MOSFET N-Channel GaN
Specifications
Case Type
DFN8X8
Common Source Input Capacitance (Ciss)
225 pF
Common Source Output Capacitance (Coss)
70 pF
Common Source Reverse Transfer Capacitance (Crss)
0.5 pF
Continuous Drain Current
29 A
Diode Forward On Voltage (VSD)
2.3 V
Drain-Source Voltage
650 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Co(er))
105 pF
Effective Output Capacitance, Time Related (Co(tr))
150 pF
Fall Time (tf)
4 ns
Gate Leakage Current, Forward (IGSSF)
163000 nA
Gate Leakage Current, Reverse (IGSSR)
163000 nA
Gate Resistance (RG)
3 Ω
Gate Threshold Voltage (VGS(th))
1.2 — 2.5 V(1.7 V Typical)
Gate-Drain Charge (Qgd)
2.2 nC
Gate-Source Charge (Qgs)
0.5 nC
Gate-Source Voltage (VGS)
-6 — 7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
58 A
Output Charge (Qoss)
60 nC
Power Dissipation
188 W
Power Dissipation
1.1 W
Rise Time (tr)
4 ns
Saturation Drain Current (IDSS)
65 µA
Static Drain-Source On Resistance (rDS(ON))
0.08 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
6.2 nC
Turn-off Delay Time (tOFF)
5 ns
Turn-on Delay Time (tON)
3 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 29A,650V Surface mount MOSFET N-Channel GaN | Box | 100 | PBFREE | |
| Active | 29A,650V Surface mount MOSFET N-Channel GaN | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| CDFG6558N_.PDF | Device Datasheet |
| Product Brief:New GaN FETs | Product Brief |
| Spice Model:CDFG6558N | Spice Model |