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CP101-BSS52

1A Bare die,27.500 X 27.500 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
1.4 — 1.75 V
Base-Emitter On Voltage (VBE(ON))
1.3 — 1.65 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.2 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
90 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1600 mV
Collector-Emitter Voltage (VCER)
80 V
Continuous Collector Current
1 A
DC Current Gain (hFE)
2000 x10³
DC Current Gain (hFE)
1000 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 200 °C
Peak Base Current
100 mA
Peak Collector Current
2 A
Power Dissipation
5 W
Power Dissipation
800 mW
Small Signal Current Gain (hfe)
10 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
219 °C/W
Thermal Resistance Junction-Case
35 °C/W
Turn Off Time (toff)
1500 ns
Turn Off Time (toff)
1500 ns
Turn On Time (ton)
400 ns
Turn On Time (ton)
400 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued1A Bare die,27.500 X 27.500 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Discontinued1A Bare die,27.500 X 27.500 mils,Transistor-Small Signal (<=1A)WafflePack20PBFREE

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