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AEM

CP127-2N6045

8A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
2.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
4.5 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
20 µA
Collector-Emitter Cutoff Current (ICEV)
20 µA
Collector-Emitter Cutoff Current (ICEV)
200 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
4000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
120 mA
Continuous Collector Current
8 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
1 — 20 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
200 pF
Peak Collector Current
16 A
Power Dissipation
75 W
Small Signal Current Gain (hfe)
300 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
1.67 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active8A,100V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)WafflePack100PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP127-2N6045_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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