CP188-2N2484
60V,50mA,360mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
0.5 — 0.7 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
0.002 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
60 MHz
Current Gain-Bandwidth Product (fT)
15 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
175 x10³
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
250 x10³
DC Current Gain (hFE)
800 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
100 — 500 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
6 pF
Input Impedance Common Emitter (hie)
3.5 — 24 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
10 dB
Noise Figure (NF)
2 dB
Noise Figure (NF)
3 dB
Noise Figure (NF)
3 dB
Output Admittance Common Emitter (hoe)
40 µS
Output Capacitance (Cob)
6 pF
Power Dissipation
360 mW
Small Signal Current Gain (hfe)
150 — 900 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
486 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.8 x10⁻³
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 60V,50mA,360mW Bare die,14.568 X 14.568 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP188.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CP188 and CP588 replaced by | Process Change Notice |
| Process Change Notice:WAFER THICKNESS REDUCTION | Process Change Notice |
| Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS | Product EOL Notice |