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AEM

CP191V-2N2219A

40V,800mA,800mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.01 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
800 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
50 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
3 W
Power Dissipation
800 mW
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
285 ns
Turn On Time (ton)
35 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active40V,800mA,800mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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