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AEM

CP191V-2N4401

40V,600mA,625mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 — 0.95 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
30 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
6.5 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
40 — 500 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
255 ns
Turn On Time (ton)
35 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active40V,600mA,625mW Bare die,16.535 X 16.535 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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