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AEM

CP287-MJE13007

400V,8A,80W Bare die,129.920 X 129.920 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
CHIP,WAFFLE
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
400 V
Collector-Emitter Voltage (VCEV)
700 V
Continuous Base Current
4 A
Continuous Collector Current
8 A
Continuous Emitter Current
12 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
5 — 30 x10³
DC Current Gain (hFE)
8 — 60 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
9 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
100 pF
Peak Base Current
8 A
Peak Collector Current
16 A
Peak Emitter Current
24 A
Power Dissipation
80 W
Second Breakdown Collector Current (Is/b)
8 A
Second Breakdown Collector Current (Is/b)
2 A
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
1.56 °C/W
Turn Off Time (toff)
3700 ns
Turn On Time (ton)
1600 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued400V,8A,80W Bare die,129.920 X 129.920 mils,Transistor-Bipolar Power (>1A)WafflePack100PBFREE

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