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AEM

CP305-BCW66H

45V,800mA,350mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.25 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Base Current
100 mA
Continuous Collector Current
800 mA
Current Gain-Bandwidth Product (fT)
170 MHz
DC Current Gain (hFE)
250 — 630 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
180 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
50 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
8 pF
Peak Base Current
200 mA
Peak Collector Current
1 A
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only45V,800mA,350mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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