CP305V-D40D11
75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A)
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
CHIP,WAFFLE
Collector-Emitter Breakdown Voltage (BVCEO)
75 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
75 V
Collector-Emitter Voltage (VCES)
90 V
Continuous Collector Current
1 A
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
120 — 360 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
1.5 A
Power Dissipation
6.25 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
20 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A) | WafflePack | 400 | PBFREE | |
| Special Order Item | 75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A) | WafflePack | 200 | PBFREE | |
| Active | 75V,1A,6.25W Bare die,31.100 X 31.100 mils,Transistor-Bipolar Power (>1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP305V-D40D11_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |