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AEM

CP310-2N3114

150V,200mA,800mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
150 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
150 V
Collector-Emitter Breakdown Voltage (BVCEO)
150 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
150 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
30 — 120 x10³
DC Current Gain (hFE)
12 x10³
DC Current Gain (hFE)
15 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
9 pF
Power Dissipation
5 W
Power Dissipation
800 mW
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active150V,200mA,800mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP310-2N3114_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document
Process Change Notice:WAFER THICKNESS REDUCTIONProcess Change Notice
Spice Model:Spice Model CP310Spice Model

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