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AEM

CP310-2N3440

250V,1A,1W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Cutoff Current (ICEO)
50 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Base Current
500 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
15 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
40 — 160 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
20000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0040
Input Capacitance (Cib)
75 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active250V,1A,1W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Special Order Item250V,1A,1W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)WafflePack20PBFREE

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