CP310-2N6517
350V,500mA,625mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.85 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
350 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
350 V
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
350 V
Continuous Base Current
250 mA
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
40 — 200 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
30 — 200 x10³
DC Current Gain (hFE)
20 — 200 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0040
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
3500 ns
Turn On Time (ton)
200 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 350V,500mA,625mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP310-2N6517_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:WAFER THICKNESS REDUCTION | Process Change Notice |