Skip to main content
AEM

CP310-CMPTA42

300V,500mA,350mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
300 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
300 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Special Order Item300V,500mA,350mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)WafflePack200PBFREE
Active300V,500mA,350mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Special Order Item300V,500mA,350mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)WafflePack20PBFREE
Special Order Item300V,500mA,350mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)WafflePack200PBFREE

Resources

Recently Viewed