CP310-CMPTA46
450V,500mA,350mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
450 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
450 V
Collector-Emitter Breakdown Voltage (BVCEO)
450 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
450 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
20 MHz
DC Current Gain (hFE)
50 — 200 x10³(110 x10³ Typical)
DC Current Gain (hFE)
45 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0040
Input Capacitance (Cib)
130 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
7 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 450V,500mA,350mW Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP310-CMPTA46_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:WAFER THICKNESS REDUCTION | Process Change Notice |