CP310-MJE340
300V,500mA,20.8W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)
Specifications
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Voltage (VCEO)
300 V
Continuous Collector Current
500 mA
DC Current Gain (hFE)
30 — 240 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
3 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
20.8 W
Storage Temperature (Tstg)
-65 — 150 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 300V,500mA,20.8W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP310-MJE340_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:WAFER THICKNESS REDUCTION | Process Change Notice |
| Spice Model:Spice Model CP310 | Spice Model |