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AEM

CP317X-2N2857

15V,40mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)

Specifications

Amplifier Power Gain (Gpe)
12.5 — 19 dB
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Time Constant (rb'Cc)
4 — 15 ps
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current
40 mA
Current Gain-Bandwidth Product (fT)
1000 — 1900 MHz
DC Current Gain (hFE)
30 — 150 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
2.5 V
Emitter-Base Voltage
2.5 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4.5 dB
Output Capacitance (Cob)
1 pF
Power Dissipation
300 mW
Power Dissipation
200 mW
Power Output (Pout)
30 mW
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active15V,40mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Active15V,40mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Special Order Item15V,40mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)WafflePack20PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP317X-2N2857_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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