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AEM

CP317X-2N918

15V,50mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)

Specifications

Amplifier Power Gain (Gpe)
15 dB
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
CHIP,WAFFLE
Collector Efficiency (η)
25 %
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
600 MHz
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage
3 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
2 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
1.7 pF
Output Capacitance (Cob)
3 pF
Power Dissipation
300 mW
Power Dissipation
200 mW
Power Output (Pout)
30 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
875 °C/W
Thermal Resistance Junction-Case
583 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active15V,50mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Active15V,50mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Special Order Item15V,50mA,200mW Bare die,14.565 X 14.565 mils,Transistor-Small Signal (<=1A)WafflePack20PBFREE

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