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AEM

CP325V-2N5320

75V,2A,10W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
1.1 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEV)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
75 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
75 V
Collector-Emitter Voltage (VCEV)
100 V
Continuous Base Current
1 A
Continuous Collector Current
2 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
30 — 200 x10³
DC Current Gain (hFE)
10 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
10 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
17.5 °C/W
Turn Off Time (toff)
800 ns
Turn On Time (ton)
80 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active75V,2A,10W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A)WafflePack400PBFREE

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