Skip to main content
AEM

CP327V-2N5308

300mA,40V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1400 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current
50 mA
Continuous Collector Current
300 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
7 — 70 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
12 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
12 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
12 pF
Input Impedance Common Emitter (hie)
650 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current
500 mA
Power Dissipation
1.5 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
7 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active300mA,40V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

Resources

Recently Viewed