CP327V-MPSA27
500mA,60V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCES)
60 V
Collector-Emitter Cutoff Current (ICES)
0.5 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCES)
60 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
125 MHz
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
10 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
10 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 500mA,60V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP327V-MPSA27_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |