CP331-CZT2000
600mA,200V Bare die,39.370 X 39.370 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Base Voltage
200 V
Collector-Emitter Breakdown Voltage (BVCES)
200 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1100 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
900 mV
Collector-Emitter Voltage (VCES)
200 V
Continuous Collector Current
600 mA
DC Current Gain (hFE)
3000 x10³
DC Current Gain (hFE)
3000 x10³
DC Current Gain (hFE)
3000 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
10 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
2 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
62.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 600mA,200V Bare die,39.370 X 39.370 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP331-CZT2000_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Spice Model:Spice Model CP331 | Spice Model |