Skip to main content
AEM

CP336V-2N5551

160V,600mA,625mW Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
180 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
180 V
Collector-Emitter Breakdown Voltage (BVCEO)
160 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Voltage (VCEO)
160 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
100 — 300 MHz
DC Current Gain (hFE)
80 — 250 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
80 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0040
Input Capacitance (Cib)
35 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
8 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
1 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
50 — 200 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active160V,600mA,625mW Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Active160V,600mA,625mW Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Special Order Item160V,600mA,625mW Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)WafflePack20PBFREE
Active160V,600mA,625mW Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

Resources

Recently Viewed