CP337V-2N3725
50V,1.2A,800mW Bare die,29.134 X 29.134 mils,Transistor-Bipolar Power (>1A)
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.76 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.86 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 — 1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.7 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
120000 nA
Collector-Base Cutoff Current (ICBO)
1700 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCES)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
260 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
520 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
800 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
950 mV
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
1.2 A
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
60 — 150 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
30 x10³
Delay Time (td)
10 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
Fall Time (tf)
25 ns
HTS Code
8541.21.0040
Input Capacitance (Cib)
55 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current
1.75 A
Power Dissipation
3.5 W
Power Dissipation
800 mW
Rise Time (tr)
30 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
50 ns
Turn Off Time (toff)
60 ns
Turn On Time (ton)
35 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 50V,1.2A,800mW Bare die,29.134 X 29.134 mils,Transistor-Bipolar Power (>1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP337V-2N3725_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Product EOL Notice:CP337V WAFER PROCESS | Product EOL Notice |
| Spice Model:Spice Model CP337 | Spice Model |