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AEM

CP348-2N5154

80V,5A,1W Bare die,82.677 X 82.677 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
1.45 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.45 V
Case Type
CHIP,WAFFLE
Collector-Emitter Breakdown Voltage (BVCES)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICES)
1 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
80 V
Collector-Emitter Voltage (VCES)
100 V
Continuous Collector Current
5 A
Current Gain-Bandwidth Product (fT)
70 MHz
DC Current Gain (hFE)
70 — 200 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
50 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
1000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
250 pF
Power Dissipation
10 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active80V,5A,1W Bare die,82.677 X 82.677 mils,Transistor-Bipolar Power (>1A)WafflePack100PBFREE

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