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AEM

CP348-BUY48

170V,7A,1W Bare die,82.677 X 82.677 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
200 V
Collector-Base Cutoff Current (ICBO)
1000000 nA
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
200 V
Collector-Emitter Breakdown Voltage (BVCEO)
170 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
450 mV
Collector-Emitter Voltage (VCEO)
170 V
Continuous Collector Current
7 A
Current Gain-Bandwidth Product (fT)
90 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
80 pF
Peak Collector Current
10 A
Power Dissipation
10 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
15 °C/W
Turn Off Time (toff)
2000 ns
Turn On Time (ton)
1000 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active170V,7A,1W Bare die,82.677 X 82.677 mils,Transistor-Bipolar Power (>1A)WafflePack100PBFREE

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