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AEM

CP349-BUY49S

200V,3A,1W Bare die,51.181 X 51.181 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
250 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
200 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
200 V
Continuous Collector Current
3 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
16 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
30 pF
Peak Collector Current
5 A
Power Dissipation
1 W
Second Breakdown Collector Current (Is/b)
0.2 A
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
15 °C/W
Turn Off Time (toff)
1000 ns
Turn On Time (ton)
300 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active200V,3A,1W Bare die,51.181 X 51.181 mils,Transistor-Bipolar Power (>1A)WafflePack400PBFREE
Special Order Item200V,3A,1W Bare die,51.181 X 51.181 mils,Transistor-Bipolar Power (>1A)WafflePack20PBFREE

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