CP388X-2N5088
30V,50mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
0.8 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
35 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
35 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
350 x10³
DC Current Gain (hFE)
300 x10³
DC Current Gain (hFE)
300 — 900 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
4.5 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
15 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
350 — 1400 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 30V,50mA,625mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP388X-2N5088_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |