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AEM

CP388X-BC107A

45V,200mA,600mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
0.77 V
Base-Emitter On Voltage (VBE(ON))
0.55 — 0.7 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.05 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.83 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
4000 nA
Collector-Base Cutoff Current (ICBO)
15 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
110 — 220 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
4.5 pF
Power Dissipation
600 mW
Small Signal Current Gain (hfe)
125 — 260 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
175 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active45V,200mA,600mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP388X-BC107A_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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