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AEM

CP388X-BC546B

65V,100mA,500mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
0.77 V
Base-Emitter On Voltage (VBE(ON))
0.58 — 0.7 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.7 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
5000 nA
Collector-Base Cutoff Current (ICBO)
15 nA
Collector-Base Voltage
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
65 V
Collector-Emitter Voltage (VCES)
80 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
200 — 450 x10³
DC Current Gain (hFE)
150 x10³
ECCN Code
EAR99
Emitter-Base Voltage
6 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
9 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
2.5 pF
Peak Base Current
200 mA
Peak Collector Current
200 mA
Peak Emitter Current
200 mA
Power Dissipation
500 mW
Small Signal Current Gain (hfe)
125 — 900 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
250 °C/W
Thermal Resistance Junction-Case
150 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active65V,100mA,500mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Active65V,100mA,500mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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