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AEM

CP388X-BC847C

45V,100mA,330mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
0.77 V
Base-Emitter On Voltage (VBE(ON))
0.58 — 0.7 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.7 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Capacitance (Ccb)
4.5 pF
Collector-Base Cutoff Current (ICBO)
5000 nA
Collector-Base Cutoff Current (ICBO)
15 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
100 mA
DC Current Gain (hFE)
420 — 800 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-55 — 150 °C
Peak Base Current
200 mA
Peak Collector Current
200 mA
Power Dissipation
330 mW
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
375 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active45V,100mA,330mW Bare die,12.990 X 12.990 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP388X-BC547C_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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