CP392V-MPS6513
30V,100mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)
Specifications
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
100 mA
DC Current Gain (hFE)
60 x10³
DC Current Gain (hFE)
90 — 180 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage
4 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
3.5 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 30V,100mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP392V-MPS6513_WPD.pdf | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |