CP396V-2N2369A
15V,200mA,360mW Bare die,14.200 X 8.700 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.15 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.85 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
30000 nA
Collector-Base Cutoff Current (ICBO)
400 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCES)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
15 V
Collector-Emitter Voltage (VCES)
40 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
500 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
40 — 120 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4.5 V
Emitter-Base Voltage
4.5 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
4 pF
Peak Collector Current
500 mA
Power Dissipation
1.2 W
Power Dissipation
360 mW
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
13 ns
Thermal Resistance Junction-Ambient
486 °C/W
Thermal Resistance Junction-Case
146 °C/W
Turn Off Time (toff)
18 ns
Turn On Time (ton)
12 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 15V,200mA,360mW Bare die,14.200 X 8.700 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE | |
| Active | 15V,200mA,360mW Bare die,14.200 X 8.700 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE | |
| Special Order Item | 15V,200mA,360mW Bare die,14.200 X 8.700 mils,Transistor-Small Signal (<=1A) | WafflePack | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP396V-2N2369A_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |