CP527-2N6668
10A,80V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
4.5 V
Base-Emitter On Voltage (VBE(ON))
3.5 V
Case Type
CHIP,WAFFLE
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCER)
80 V
Collector-Emitter Breakdown Voltage (BVCEV)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
300 µA
Collector-Emitter Cutoff Current (ICEV)
3000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
80 V
Collector-Emitter Voltage (VCER)
80 V
Collector-Emitter Voltage (VCEV)
80 V
Continuous Base Current
250 mA
Continuous Collector Current
10 A
Current Gain-Bandwidth Product (fT)
20 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
1 — 20 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000000 nA
Emitter-Base Voltage
5 V
Forward Voltage (VF)
4 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
15 A
Power Dissipation
2 W
Power Dissipation
65 W
Second Breakdown Collector Current (Is/b)
3.2 A
Second Breakdown Energy (ES/b)
30 mJ
Small Signal Current Gain (hfe)
1000 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
62.5 °C/W
Thermal Resistance Junction-Case
1.92 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 10A,80V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) | WafflePack | 100 | PBFREE | |
| Active | 10A,80V Bare die,110.000 X 110.000 mils,Transistor-Bipolar Power (>1A) | WafflePack | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP527-2N6668_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |