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AEM

CP591X-2N2907A

60V,600mA,400mW Bare die,19.290 X 19.290 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
2.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEV)
0.05 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
75 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Input Capacitance (Cib)
30 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
1.8 W
Power Dissipation
400 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
438 °C/W
Thermal Resistance Junction-Case
97 °C/W
Turn Off Time (toff)
100 ns
Turn On Time (ton)
45 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active60V,600mA,400mW Bare die,19.290 X 19.290 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Active60V,600mA,400mW Bare die,19.290 X 19.290 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Special Order Item60V,600mA,400mW Bare die,19.290 X 19.290 mils,Transistor-Small Signal (<=1A)WafflePack20PBFREE
Active60V,600mA,400mW Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,19.290 X 19.290 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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