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AEM

CP611-2N6107

70V,7A,40W Bare die,99.000 X 80.000 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
3 V
Case Type
CHIP,WAFFLE
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
70 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
2000 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3500 mV
Collector-Emitter Voltage (VCEO)
70 V
Continuous Base Current
3 A
Continuous Collector Current
7 A
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
2.3 x10³
DC Current Gain (hFE)
30 — 150 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
250 pF
Peak Collector Current
10 A
Power Dissipation
40 W
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
3.13 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued70V,7A,40W Bare die,99.000 X 80.000 mils,Transistor-Bipolar Power (>1A)WafflePack100PBFREE

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