CP617-CM4957
25V,30mA,200mW Bare die,15.700 X 15.700 mils,Transistor-Small Signal (<=1A)
Specifications
Amplifier Power Gain (Gpe)
17 — 25 dB
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
30 mA
Current Gain-Bandwidth Product (fT)
1200 — 2500 MHz
DC Current Gain (hFE)
20 — 150 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage
3 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
2 pF
Power Dissipation
300 mW
Power Dissipation
200 mW
Small Signal Current Gain (hfe)
20 — 200 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 25V,30mA,200mW Bare die,15.700 X 15.700 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE | |
| Discontinued | 25V,30mA,200mW Bare die,15.700 X 15.700 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP617-CM4957_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Product EOL Notice:RF TRANSISTOR DIE | Product EOL Notice |
| Spice Model:Spice Model CP617 | Spice Model |