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AEM

CP618-CM5583

30V,500mA,1W Bare die,21.700 X 21.700 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
1.8 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Time Constant (rb'Cc)
8 ps
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
800 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
1300 MHz
Current Gain-Bandwidth Product (fT)
1000 MHz
DC Current Gain (hFE)
25 — 100 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
20 x10³
Delay Time (td)
2.5 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Cutoff Current (IEBO)
500 nA
Emitter-Base Voltage
3 V
Fall Time (tf)
5 ns
HTS Code
8541.29.0040
Input Capacitance (Cib)
70 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
5 pF
Power Dissipation
5 W
Power Dissipation
1 W
Rise Time (tr)
4.5 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
3.5 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued30V,500mA,1W Bare die,21.700 X 21.700 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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