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AEM

CP647-MJ11015

30A,120V Bare die,211.000 X 211.000 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
5 V
Base-Emitter Saturation Voltage (VBE(SAT))
3.5 V
Case Type
CHIP,WAFFLE
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
120 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICER)
1000 µA
Collector-Emitter Cutoff Current (ICER)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
4000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Voltage (VCEO)
120 V
Continuous Base Current
1 A
Continuous Collector Current
30 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
1000 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-55 — 200 °C
Power Dissipation
200 W
Storage Temperature (Tstg)
-55 — 200 °C
Thermal Resistance Junction-Case
0.87 K/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued30A,120V Bare die,211.000 X 211.000 mils,Transistor-Bipolar Power (>1A)WafflePack36PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP647-MJ11015_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document
Product EOL Notice:CP647 WAFER PROCESSProduct EOL Notice

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