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AEM

CP704V-CMPT8599

80V,500mA,350mW Bare die,22.000 X 22.000 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
0.6 — 0.8 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
100 — 300 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0040
Input Capacitance (Cib)
30 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
4.5 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active80V,500mA,350mW Bare die,22.000 X 22.000 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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