CP704V-CMPTA56
80V,500mA,350mW Bare die,22.000 X 22.000 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
1.2 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEO)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current
100 mA
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage
4 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 175 °C
Peak Base Current
200 mA
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 175 °C
Thermal Resistance Junction-Ambient
429 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 80V,500mA,350mW Bare die,22.000 X 22.000 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP704V-CMPTA56_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |