CP705V-BC327-25
45V,500mA,625mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
1.2 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
5000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Base Current
100 mA
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
80 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
160 — 400 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Base Current
200 mA
Peak Collector Current
1 A
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 45V,500mA,625mW Bare die,31.100 X 31.100 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP705V_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |