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AEM

CP710V-2N5416

300V,1A,1W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Voltage
350 V
Collector-Emitter Breakdown Voltage (BVCER)
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Cutoff Current (ICEO)
50 µA
Collector-Emitter Cutoff Current (ICEV)
50 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
300 V
Continuous Base Current
500 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
15 MHz
DC Current Gain (hFE)
30 — 120 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
20000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0040
Input Capacitance (Cib)
75 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
15 pF
Power Dissipation
1 W
Second Breakdown Collector Current (Is/b)
0.1 A
Small Signal Current Gain (hfe)
25 x10³
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active300V,1A,1W Bare die,25.980 X 25.980 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP710V-2N5416_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document
Process Change Notice:CP710V PROCESSProcess Change Notice

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