CP710V-CJD350
300V,500mA,15W Bare die,25.980 X 25.980 mils,Transistor-Bipolar Power (>1A)
Specifications
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2600 mV
Collector-Emitter Voltage (VCEO)
300 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
30 — 240 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
3 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
750 mA
Power Dissipation
1.56 W
Power Dissipation
15 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
80.1 °C/W
Thermal Resistance Junction-Case
8.33 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 300V,500mA,15W Bare die,25.980 X 25.980 mils,Transistor-Bipolar Power (>1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP710V-CJD350_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |
| Process Change Notice:CP710V PROCESS | Process Change Notice |