No image available
CP734V-CMPT404A
35V,150mA,350mW Bare die,31.496 X 31.496 mils,Transistor-Small Signal (<=1A)
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.85 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
35 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Voltage (VCEO)
35 V
Continuous Collector Current
150 mA
DC Current Gain (hFE)
100 — 400 x10³
Delay Time (td)
150 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
25 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
25 V
Fall Time (tf)
750 ns
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
40 pF
Power Dissipation
350 mW
Rise Time (tr)
400 ns
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
3000 ns
Thermal Resistance Junction-Ambient
357 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 35V,150mA,350mW Bare die,31.496 X 31.496 mils,Transistor-Small Signal (<=1A) | WafflePack | 400 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Active Device, Rectifier | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Schottky | Analytical Test Report |
| Analytical Test Report:Wafer Switching Diode | Analytical Test Report |
| Analytical Test Report:Wafer Transistor | Analytical Test Report |
| Analytical Test Report:Wafer Zener | Analytical Test Report |
| CP734V-CMPT404A_WPD.PDF | Device Datasheet |
| Package Detail Document:WAFER | Package Detail Document |