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AEM

CP736V-2N5400

120V,600mA,625mW Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
130 V
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
130 V
Collector-Emitter Breakdown Voltage (BVCEO)
120 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
120 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
100 — 400 MHz
DC Current Gain (hFE)
40 — 240 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
8 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
30 — 200 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active120V,600mA,625mW Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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