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AEM

CP740V-2N5367

40V,300mA,625mW Bare die,22.047 X 22.047 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
0.5 — 0.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
300 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
250 — 500 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
4 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
700 mA
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
200 — 750 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active40V,300mA,625mW Bare die,22.047 X 22.047 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP740V-2N5367_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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