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AEM

CP753V-MJE210

25V,5A,1.5W Bare die,65.748 X 65.748 mils,Transistor-Bipolar Power (>1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
1.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Case Type
CHIP,WAFFLE
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1800 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Base Current
1 A
Continuous Collector Current
5 A
Current Gain-Bandwidth Product (fT)
65 MHz
DC Current Gain (hFE)
45 — 180 x10³
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
70 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
8 V
HTS Code
8541.29.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
120 pF
Peak Collector Current
10 A
Power Dissipation
15 W
Power Dissipation
1.5 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
83.4 °C/W
Thermal Resistance Junction-Case
8.34 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active25V,5A,1.5W Bare die,65.748 X 65.748 mils,Transistor-Bipolar Power (>1A)WafflePack324PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP753V-MJE210_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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