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CP767V-2N3467

40V,1A,1W Bare die,29.920 X 29.920 mils,Transistor-Small Signal (<=1A)

Specifications

Base Cutoff Current (IBL)
120 nA
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 — 1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
15000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
175 MHz
DC Current Gain (hFE)
40 — 120 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.29.0040
Input Capacitance (Cib)
100 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
25 pF
Power Dissipation
5 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
35 °C/W
Total Control Charge (QT)
6 nC
Turn Off Time (toff)
90 ns
Turn On Time (ton)
40 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued40V,1A,1W Bare die,29.920 X 29.920 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE
Discontinued, Stock Only40V,1A,1W Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,29.920 X 29.920 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

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