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AEM

CP782X-CMPT7820

60V,1A,350mW Bare die,26.000 X 26.000 mils,Transistor-Small Signal (<=1A)

Specifications

Base-Emitter On Voltage (VBE(ON))
0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
CHIP,WAFFLE
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
175 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
180 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
340 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
300 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0040
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
15 pF
Peak Collector Current
2 A
Power Dissipation
350 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active60V,1A,350mW Bare die,26.000 X 26.000 mils,Transistor-Small Signal (<=1A)WafflePack400PBFREE

Resources

ItemType
Analytical Test Report:Active Device, RectifierAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:DieAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer SchottkyAnalytical Test Report
Analytical Test Report:Wafer Switching DiodeAnalytical Test Report
Analytical Test Report:Wafer TransistorAnalytical Test Report
Analytical Test Report:Wafer ZenerAnalytical Test Report
CP782X-CMPT7820_WPD.PDFDevice Datasheet
Package Detail Document:WAFERPackage Detail Document

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